TT8U2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Package / Case :

8-SMD, Flat Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Gate to Source Voltage (Vgs) :

10V

Rise Time :

25ns

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.4A, 4.5V

FET Feature :

Schottky Diode (Isolated)

Drain-source On Resistance-Max :

0.105Ohm

Published :

2012

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9 ns

Fall Time (Typ) :

45 ns

Vgs(th) (Max) @ Id :

1V @ 1mA

DS Breakdown Voltage-Min :

20V

Turn-Off Delay Time :

55 ns

Lead Free :

Lead Free

Mount :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs (Max) :

±10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Number of Pins :

8

FET Type :

P-Channel

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

2.4A

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

1.25W Ta

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 4.5V