CSD18503KCS

Manufacturer :

National Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

5.7 ns

Number of Elements :

1

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0068Ohm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Length :

10.16mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

40V

Factory Lead Time :

6 Weeks

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Packaging :

Tube

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

14 ns

Base Part Number :

CSD18503

Fall Time (Typ) :

6.8 ns

Number of Terminations :

3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 20V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

5.3ns

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Height :

4.7mm

Power Dissipation :

143W

FET Type :

N-Channel

Continuous Drain Current (ID) :

100A

Vgs (Max) :

±20V

Thickness :

4.58mm

Power Dissipation-Max :

188W Tc

Mount :

Through Hole

Width :

8.7mm

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

Pbfree Code :

yes

Contact Plating :

Tin