FDMA2002NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

850μm

Resistance :

123mOhm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Radiation Hardening :

No

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Element Configuration :

Dual

Rise Time :

8ns

Package / Case :

6-VDFN Exposed Pad

Current Rating :

2.9A

Case Connection :

DRAIN

Turn On Delay Time :

6 ns

Threshold Voltage :

1V

Power Dissipation :

1.5W

Weight :

40mg

Number of Pins :

6

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Max Power Dissipation :

650mW

Feedback Cap-Max (Crss) :

30 pF

Rds On (Max) @ Id, Vgs :

123m Ω @ 2.9A, 4.5V

Width :

2mm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Elements :

2

Length :

2mm

Gate to Source Voltage (Vgs) :

12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

1.5V @ 250µA

JESD-609 Code :

e4

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Series :

PowerTrench®

Turn-Off Delay Time :

12 ns

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

2.9A

Pbfree Code :

yes

Fall Time (Typ) :

8 ns