MT47H128M16RT-25E AAT:C

Manufacturer :

Micron Technology

Product Category :

Memory

Access Time :

400ps

Write Cycle Time - Word, Page :

15ns

Supply Voltage-Max (Vsup) :

1.9V

Surface Mount :

yes

Terminal Position :

BOTTOM

Screening Level :

AEC-Q100

JESD-609 Code :

e1

I/O Type :

COMMON

ECCN Code :

EAR99

Output Characteristics :

3-STATE

Mounting Type :

Surface Mount

Height Seated (Max) :

1.2mm

Base Part Number :

MT47H128M16

Memory Width :

16

Peak Reflow Temperature (Cel) :

260

Memory Size :

2Gb 128M x 16

Length :

12.5mm

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Number of Terminations :

84

Number of Functions :

1

Power Supplies :

1.8V

HTS Code :

8542.32.00.36

Memory Format :

DRAM

Factory Lead Time :

4 Weeks

Supply Voltage :

1.8V

Width :

9mm

Refresh Cycles :

8192

Supply Voltage-Min (Vsup) :

1.7V

Packaging :

Tray

Operating Mode :

SYNCHRONOUS

Interleaved Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

2147483648 bit

Pin Count :

84

Memory Interface :

Parallel

Organization :

128MX16

Sequential Burst Length :

48

RoHS Status :

ROHS3 Compliant

Standby Current-Max :

0.012A

Package / Case :

84-TFBGA

Operating Temperature :

-40°C~105°C TC

Memory Type :

Volatile

Terminal Pitch :

0.8mm

Voltage - Supply :

1.7V~1.9V

Clock Frequency :

400MHz

JESD-30 Code :

R-PBGA-B84

Supply Current-Max :

0.33mA

Published :

2014

Qualification Status :

Not Qualified

Additional Feature :

AUTO/SELF REFRESH

Number of Ports :

1