NDC7002N
- Mfr.Part #
- NDC7002N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 50V 0.51A SSOT6
- Stock
- 239
- In Stock :
- 239
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 2Ohm
- Number of Pins :
- 6
- Number of Terminations :
- 6
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Number of Elements :
- 2
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 1nC @ 10V
- Width :
- 1.7mm
- Number of Channels :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 20pF @ 25V
- Length :
- 3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 900μm
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 50V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Published :
- 1998
- Element Configuration :
- Dual
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 5 Weeks
- Nominal Vgs :
- 1.9 V
- Continuous Drain Current (ID) :
- 510mA
- FET Type :
- 2 N-Channel (Dual)
- REACH SVHC :
- No SVHC
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 510mA, 10V
- Rise Time :
- 6ns
- Threshold Voltage :
- 1.9V
- Dual Supply Voltage :
- 50V
- Drain to Source Breakdown Voltage :
- 50V
- Drain Current-Max (Abs) (ID) :
- 0.51A
- Turn On Delay Time :
- 6 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 700mW
- Contact Plating :
- Tin
- Power Dissipation :
- 960mW
- Weight :
- 36mg
- Current Rating :
- 350mA
- Fall Time (Typ) :
- 6 ns
- FET Feature :
- Logic Level Gate
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn-Off Delay Time :
- 11 ns
- Datasheets
- NDC7002N

NDC7002N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDC7002N Description
The ON Semiconductor NDC7002N is a dual N-Channel enhancement mode power field effect transistor built using the company's patented high cell density DMOS technology.
NDC7002N Features
-
High-density cell design for extremely low RDS(ON)
-
Proprietary SuperSOTTM-6 package design using the copper lead frame for superior thermal and electrical capabilities
-
0.51 A, 50 V. RDS(ON) = 2 Ω @ VGS = 10 V
-
High saturation current
NDC7002N Applications
General usage and suitable for many different applications.
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|---|---|---|---|
| NDC7001C | onsemi | 2,610 | MOSFET N/P-CH 60V SSOT6 |
| NDC7002N_SB9G007 | onsemi | 20,218 | MOSFET 2N-CH 50V 0.51A 6-SSOT |
| NDC7003P | onsemi | 29,339 | MOSFET 2P-CH 60V 0.34A SSOT6 |
















