2SB817C-1E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

10MHz

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Emitter Base Voltage (VEBO) :

6V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Vce Saturation (Max) @ Ib, Ic :

2V @ 500mA, 5A

hFE Min :

100

Collector Base Voltage (VCBO) :

160V

Mounting Type :

Through Hole

Polarity/Channel Type :

PNP

Mount :

Through Hole

Number of Terminations :

3

Continuous Collector Current :

12A

Pbfree Code :

yes

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Transistor Type :

PNP

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

140V

Package / Case :

TO-3P-3, SC-65-3

JEDEC-95 Code :

TO-247

Collector Emitter Saturation Voltage :

2V

Collector Emitter Voltage (VCEO) :

140V

Max Collector Current :

12A

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100μA ICBO

Reach Compliance Code :

not_compliant

Published :

2003

Transistor Element Material :

SILICON

Packaging :

Tube

Terminal Position :

Single

Lead Free :

Lead Free

Number of Elements :

1

Transition Frequency :

10MHz

Power Dissipation :

2.5W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

120W