APTGT100DH60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Current - Collector Cutoff (Max) :

250μA

Operating Temperature :

-40°C~175°C TJ

NTC Thermistor :

yes

Number of Elements :

2

Qualification Status :

Not Qualified

Number of Terminations :

11

Mount :

Screw, Through Hole

Power - Max :

340W

Element Configuration :

Dual

Terminal Position :

UPPER

VCEsat-Max :

1.9 V

Mounting Type :

Through Hole

Factory Lead Time :

22 Weeks

Collector Emitter Voltage (VCEO) :

600V

Turn Off Time-Nom (toff) :

370 ns

Configuration :

Asymmetrical Bridge

Input :

Standard

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

340W

Polarity/Channel Type :

N-Channel

Max Collector Current :

150A

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

JESD-30 Code :

R-XUFM-X11

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

RoHS Compliant

Input Capacitance :

6.1nF

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Time :

180 ns

Input Capacitance (Cies) @ Vce :

6.1nF @ 25V

Pin Count :

25

IGBT Type :

Trench Field Stop

Number of Pins :

16

Case Connection :

Isolated

Package / Case :

SP3

Published :

2012

Gate-Emitter Voltage-Max :

20V