FF450R12KE4HOSA1

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Mfr.Part #
FF450R12KE4HOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 520A 2400W
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Published :
2008
Element Configuration :
Dual
VCEsat-Max :
2.15 V
RoHS Status :
ROHS3 Compliant
Number of Pins :
7
Lead Free :
Lead Free
Operating Temperature :
-40°C~150°C TJ
Package / Case :
Module
Input Capacitance (Cies) @ Vce :
28nF @ 25V
Turn On Time :
325 ns
Pin Count :
7
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 450A
Number of Elements :
2
Input :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1200V
Terminal Position :
UPPER
Configuration :
Half Bridge
Pbfree Code :
yes
IGBT Type :
Trench Field Stop
Surface Mount :
No
Factory Lead Time :
14 Weeks
Series :
C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate-Emitter Voltage-Max :
20V
Power - Max :
2400W
Turn Off Time-Nom (toff) :
800 ns
Halogen Free :
Not Halogen Free
Current - Collector (Ic) (Max) :
520A
ECCN Code :
EAR99
NTC Thermistor :
No
Number of Terminations :
7
Case Connection :
Isolated
Power Dissipation-Max (Abs) :
2400W
Polarity :
NPN
Mounting Type :
Chassis Mount
Current - Collector Cutoff (Max) :
5mA
Datasheets
FF450R12KE4HOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF450R12KE4HOSA1 from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:7, Operating Temperature:-40°C~150°C TJ, Package / Case:Module, Number of Terminations:7, Mounting Type:Chassis Mount, FF450R12KE4HOSA1 pinout, FF450R12KE4HOSA1 datasheet PDF, FF450R12KE4HOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF450R12KE4HOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF450R12KE4HOSA1


FF450R12KE4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF450R12KE4HOSA1                              Description

 

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

FF450R12KE4HOSA1                              Applications

· High Power Converters

· Motor Drives

· UPS Systems

 

FF450R12KE4HOSA1                              Features

? Half-bridge

? Including fast free-wheeling diodes

? Package with insulated metal base plate

? RG on,min = 27 Ohm

 

 


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