HIP2100EIBZT
- Mfr.Part #
- HIP2100EIBZT
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 19,448
- In Stock :
- 19,448
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Terminal Form :
- Gull wing
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Channel Type :
- Independent
- Voltage - Supply :
- 9 V ~ 14 V
- Qualification Status :
- Not Qualified
- Logic Voltage - VIL, VIH :
- 4V, 7V
- Max Supply Voltage :
- 114V
- Mounting Type :
- Surface Mount
- Gate Type :
- N-Channel MOSFET
- Nominal Supply Current :
- 2.5mA
- Rise Time :
- 10ns
- High Side Driver :
- yes
- Width :
- 3.9mm
- Current - Output :
- 2A
- Terminal Position :
- Dual
- Max Supply Current :
- 2.5mA
- Supplier Device Package :
- 8-SOIC-EP
- Series :
- --
- Mount :
- Surface Mount
- Published :
- 2001
- High Side Voltage - Max (Bootstrap) :
- 114V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Turn On Time :
- 0.045 µs
- JESD-609 Code :
- e3
- Number of Functions :
- 1
- Package / Case :
- SOIC
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 8
- Turn Off Time :
- 0.045 µs
- Supply Voltage :
- 12V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Power Dissipation-Max :
- 3.1W
- Temperature Grade :
- Automotive
- Number of Drivers :
- 2
- Packaging :
- Cut Tape
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Rise / Fall Time (Typ) :
- 10ns, 10ns
- Fall Time (Typ) :
- 10 ns
- Turn On Delay Time :
- 8 ns
- Turn-Off Delay Time :
- 8 ns
- Current - Peak Output (Source, Sink) :
- 2A, 2A
- Min Supply Voltage :
- 9V
- Base Part Number :
- HIP2100
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Max Output Current :
- 2A
- Driven Configuration :
- Half-Bridge
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Min Operating Temperature :
- -40°C
- Input Type :
- Non-Inverting
- Output Peak Current Limit-Nom :
- 2A
- Datasheets
- HIP2100EIBZT

Gate Drivers Intersil (Renesas Electronics Corporation) HIP2100EIBZT Overview
The Gate Drivers Intersil (Renesas Electronics Corporation) HIP2100EIBZT is a high-performance, half-bridge gate driver designed to efficiently control MOSFET and IGBT switches. This IC integrates advanced features that enhance system reliability and performance, making it an ideal choice for sophisticated switching applications. With its robust design and compact 8SOIC package, the HIP2100EIBZT ensures minimal footprint while providing maximum functionality, supporting the needs of high-density power electronics systems. This gate driver is particularly suited for applications requiring high efficiency, fast switching speeds, and reliable operation under harsh conditions.
HIP2100EIBZT Features
- High peak output drive current of up to 2.5A.
- Wide supply voltage range from 9V to 20V.
- Integrated under-voltage lockout for improved safety and performance.
- Matched propagation delays for better switching performance.
- Low power consumption and high efficiency design.
- Robust thermal performance with over-temperature protection.
HIP2100EIBZT Applications
- DC/AC Inverters: Utilizes the HIP2100EIBZT to drive high-power switches in inverters, facilitating efficient power conversion.
- Motor Drives: Employs the HIP2100EIBZT for precise control of motor drive circuits, enhancing performance and reliability in industrial and automotive applications.
- Power Supplies: Applies the HIP2100EIBZT in switch-mode power supplies to improve efficiency and response times, particularly in compact power management systems.
- Solar Power Systems: The HIP2100EIBZT is used in photovoltaic systems to efficiently manage power flow between solar panels and storage units.
- Electric Vehicles: Supports electric vehicle power management systems by ensuring efficient and safe switching of power electronics components.
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