IRF9321TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Nominal Vgs :

-1.8 V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

21 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Threshold Voltage :

-1.8V

Series :

HEXFET®

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Resistance :

7.2mOhm

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2590pF @ 25V

Rise Time :

79ns

Continuous Drain Current (ID) :

-15A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Length :

4.9784mm

Mounting Type :

Surface Mount

Fall Time (Typ) :

145 ns

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

185 ns

Height :

1.75mm

Published :

2008

Number of Elements :

1

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

2.5W Ta

Number of Channels :

1

Width :

3.9878mm

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Power Dissipation :

2.5W

Radiation Hardening :

No

FET Type :

P-Channel

Transistor Element Material :

SILICON