NST3906DXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Factory Lead Time :

17 Weeks

Gain Bandwidth Product :

250MHz

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Voltage - Rated DC :

-40V

Power Dissipation :

500mW

Published :

2003

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

Emitter Base Voltage (VEBO) :

5V

Turn On Time-Max (ton) :

70ns

Collector Emitter Breakdown Voltage :

40V

Current Rating :

-200mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-400mV

Transistor Type :

2 PNP (Dual)

Collector Base Voltage (VCBO) :

40V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Surface Mount :

yes

Element Configuration :

Dual

Max Power Dissipation :

500mW

Collector Emitter Voltage (VCEO) :

40V

Turn Off Time-Max (toff) :

300ns

Length :

1.7mm

Terminal Form :

Flat

Width :

1.3mm

Number of Pins :

6

Polarity :

PNP

Contact Plating :

Tin

Transition Frequency :

250MHz

Transistor Application :

AMPLIFIER

hFE Min :

60

RoHS Status :

ROHS3 Compliant

Frequency :

250MHz

Max Breakdown Voltage :

40V

Pin Count :

6

Max Collector Current :

200mA

Height :

600μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V