2PB1219AR,115
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- Mfr.Part #
- 2PB1219AR,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 500MA SOT323
- Stock
- 913
- In Stock ：
- 913
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- HTS Code :
- 8541.21.00.75
- RoHS Status :
- ROHS3 Compliant
- VCEsat-Max :
- 0.6 V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Lead Free :
- Lead Free
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Collector-Base Capacitance-Max :
- 15pF
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- JESD-30 Code :
- R-PDSO-G3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Transition Frequency :
- 120MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- 2PB1219
- Datasheets
- 2PB1219AR,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB1219AR,115 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB1219AR,115 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB1219AR,115 Applications
There are a lot of Nexperia USA Inc.
2PB1219AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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