2PD601ASW,115
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- Mfr.Part #
- 2PD601ASW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PD601ASW - SMALL S
- Stock
- 13,362
- In Stock ：
- 13,362
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-70, SOT-323
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pin Count :
- 3
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- 2PD601A
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 200mW
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- hFE Min :
- 290
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Contact Plating :
- Tin
- Datasheets
- 2PD601ASW,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PD601ASW,115 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PD601ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PD601ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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