2SA1416S-TD-E
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- Mfr.Part #
- 2SA1416S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 434
- In Stock ：
- 434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- -6V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- hFE Min :
- 140
- Gain Bandwidth Product :
- 120MHz
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Width :
- 2.5mm
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -120V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2012
- Height :
- 1.5mm
- Reach Compliance Code :
- not_compliant
- Length :
- 4.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 120MHz
- JESD-609 Code :
- e6
- Pin Count :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Frequency :
- 1MHz
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -200mV
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Datasheets
- 2SA1416S-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416S-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
2SA1416S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1416S-TD-E Applications
There are a lot of ON Semiconductor
2SA1416S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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