APT5010LLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Radiation Hardening :

No

Pin Count :

3

FET Type :

N-Channel

Power Dissipation :

520W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Vgs (Max) :

±30V

Rise Time :

15ns

Voltage - Rated DC :

500V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-264-3, TO-264AA

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Factory Lead Time :

23 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Mounting Type :

Through Hole

Fall Time (Typ) :

3 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

100m Ω @ 23A, 10V

Turn-Off Delay Time :

25 ns

Turn On Delay Time :

11 ns

Number of Pins :

3

Terminal Position :

Single

Case Connection :

DRAIN

Published :

1997

Mount :

Through Hole

Terminal Finish :

PURE MATTE TIN

Power Dissipation-Max :

520W Tc

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Current Rating :

46A

Series :

POWER MOS 7®

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 25V

Continuous Drain Current (ID) :

46A

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-55°C~150°C TJ