AT-32011-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

200mW

Number of Pins :

4

Emitter Base Voltage (VEBO) :

1.5V

Current Rating :

32mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Published :

2009

Continuous Collector Current :

32mA

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Configuration :

Single

Gain :

12.5dB ~ 14dB

Collector Emitter Voltage (VCEO) :

5.5V

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2mA 2.7V

Collector Base Voltage (VCBO) :

11V

Mount :

Surface Mount

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Terminal Finish :

Matte Tin (Sn)

Frequency :

30GHz

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

5.5V

Factory Lead Time :

6 Weeks

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1dB ~ 1.3dB @ 900MHz

Gain Bandwidth Product :

10 GHz

Case Connection :

COLLECTOR

Number of Elements :

1

ECCN Code :

EAR99

Package / Case :

TO-253-4, TO-253AA

Transistor Type :

NPN

Max Collector Current :

32mA

Number of Terminations :

4

Power Dissipation :

200mW

Base Part Number :

AT32011

Voltage - Rated DC :

5.5V

Contact Plating :

Gold