BFP182WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Product Status :

Active

Current - Collector (Ic) (Max) :

35mA

Manufacturer :

Rochester Electronics LLC

Max Breakdown Voltage :

12 V

RoHS :

Compliant

Emitter Base Voltage (VEBO) :

2 V

Package :

Bulk

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Number of Pins :

4

Max Power Dissipation :

250 mW

Surface Mount :

yes

Lead Free :

Lead Free

Continuous Collector Current :

35 mA

Number of Elements :

1

Case Connection :

COLLECTOR

Package / Case :

SC-82A, SOT-343

Collector-Base Capacitance-Max :

0.45 pF

Collector-Emitter Voltage-Max :

12 V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Gain :

22 dB

Voltage - Collector Emitter Breakdown (Max) :

12V

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

8 GHz

Collector Current-Max (IC) :

0.035 A

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Power Dissipation :

250 mW

Package Shape :

RECTANGULAR

Configuration :

Single

Current Rating :

35 mA

Reach Compliance Code :

Unknown

Gain Bandwidth Product :

8 GHz

JESD-30 Code :

R-PDSO-G4

Max Operating Temperature :

150 °C

Series :

-

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Max Frequency :

8 GHz

Polarity :

NPN

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Collector Emitter Voltage (VCEO) :

12 V

Frequency :

8 GHz

Terminal Position :

Dual

Operating Temperature :

150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA, 8V

Pbfree Code :

yes

Number of Terminals :

4

Supplier Device Package :

PG-SOT343-4

Voltage Rating (DC) :

12 V

Polarity/Channel Type :

NPN

Max Collector Current :

35 mA

Min Operating Temperature :

-65 °C

Frequency - Transition :

8GHz

Power - Max :

250mW

Collector Emitter Breakdown Voltage :

12 V

Terminal Finish :

MATTE TIN