BFP640ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

200mW

Configuration :

Single

Mounting Type :

Surface Mount

Number of Terminations :

4

Frequency :

46GHz

Collector Emitter Breakdown Voltage :

4.7V

Transistor Type :

NPN

Max Breakdown Voltage :

4.7V

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

4.1V

Transistor Application :

AMPLIFIER

Gain :

7dB ~ 30dB

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Max Collector Current :

50mA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Number of Elements :

1

Published :

2003

Transistor Element Material :

SILICON GERMANIUM CARBON

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

4.8V

Packaging :

Tape and Reel (TR)

Base Part Number :

BFP640

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Noise Figure (dB Typ @ f) :

0.6dB ~ 2dB @ 150MHz ~ 10GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

JESD-609 Code :

e3

Package / Case :

SC-82A, SOT-343

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200mW

Halogen Free :

Halogen Free

Terminal Position :

Dual

Transition Frequency :

45000MHz

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks