BSL207SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.041Ohm

Operating Temperature :

-55°C~150°C TJ

Reference Standard :

AEC-Q101

Published :

2001

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1007pF @ 15V

Number of Elements :

1

Power Dissipation-Max :

2W Ta

Avalanche Energy Rating (Eas) :

44 mJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

ECCN Code :

EAR99

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

24A

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-G6

HTS Code :

8541.29.00.95

JESD-609 Code :

e3

Pbfree Code :

yes

Terminal Form :

Gull wing

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

41m Ω @ 6A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

DS Breakdown Voltage-Min :

20V

Drain Current-Max (Abs) (ID) :

6A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.2V @ 40μA