BSM080D12P2C008

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

175°C TJ

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Surface Mount :

No

Number of Pins :

10

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

160A

Vgs(th) (Max) @ Id :

4V @ 13.2mA

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Silicon Carbide (SiC)

DS Breakdown Voltage-Min :

1200V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

25 Weeks

ECCN Code :

EAR99

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Reach Compliance Code :

not_compliant

Case Connection :

Isolated

Continuous Drain Current (ID) :

80A

Package / Case :

Module

Packaging :

Tray

JESD-30 Code :

R-XUFM-X8

Number of Elements :

2

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Max Power Dissipation :

600W

FET Type :

2 N-Channel (Dual)