BSM120D12P2C005

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Bulk

JESD-30 Code :

R-XUFM-X8

Height :

21.1mm

Reach Compliance Code :

not_compliant

Case Connection :

Isolated

Max Power Dissipation :

780W

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.7V @ 22mA

Number of Channels :

1

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

45.6mm

Length :

122mm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

25 Weeks

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 10V

Number of Terminations :

8

Number of Pins :

10

Threshold Voltage :

2.7V

REACH SVHC :

Unknown

Mount :

Screw

FET Feature :

Silicon Carbide (SiC)

Gate to Source Voltage (Vgs) :

22V

Nominal Vgs :

2.7 V

Terminal Position :

UPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

120A

Transistor Application :

SWITCHING

Terminal Form :

UNSPECIFIED

Package / Case :

Module

Pulsed Drain Current-Max (IDM) :

240A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Half Bridge)