BSM150GB170DN2HOSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 150A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Half Bridge

Current - Collector Cutoff (Max) :

1.5mA

Case Connection :

Isolated

Number of Terminations :

7

Input :

Standard

Power - Max :

1250W

Package / Case :

Module

Terminal Form :

UNSPECIFIED

Input Capacitance :

20nF

Number of Elements :

2

Turn Off Time-Nom (toff) :

1310 ns

Collector Emitter Breakdown Voltage :

1.7kV

Max Collector Current :

220A

Mount :

Chassis Mount

Terminal Position :

UPPER

Pbfree Code :

yes

Max Power Dissipation :

1.25kW

JESD-30 Code :

R-XUFM-X7

Operating Temperature :

150°C TJ

Turn On Time :

720 ns

Voltage - Collector Emitter Breakdown (Max) :

1700V

Mounting Type :

Chassis Mount

Collector Emitter Voltage (VCEO) :

3.9V

Input Capacitance (Cies) @ Vce :

20nF @ 25V

Published :

1999

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Pin Count :

7

NTC Thermistor :

No

RoHS Status :

RoHS Compliant