BSM180D12P3C007

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

DS Breakdown Voltage-Min :

1200V

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Terminal Form :

UNSPECIFIED

Max Power Dissipation :

880W

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Case Connection :

Isolated

Mounting Type :

Surface Mount

FET Feature :

Silicon Carbide (SiC)

Number of Elements :

2

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

180A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5.6V @ 50mA

JESD-30 Code :

R-XUFM-X10

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

Module

Number of Terminations :

10

Pulsed Drain Current-Max (IDM) :

360A

Factory Lead Time :

25 Weeks

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Operating Temperature :

175°C TJ

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant