BSM30GD60DLCE3224

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Mfr.Part #
BSM30GD60DLCE3224
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 600V 40A 135W
Stock
13,912
In Stock :
13,912

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
17
Terminal Position :
UPPER
RoHS Status :
RoHS Compliant
Terminal Form :
UNSPECIFIED
NTC Thermistor :
No
Number of Pins :
17
Configuration :
Single
Case Connection :
Isolated
Current - Collector Cutoff (Max) :
500μA
Gate-Emitter Voltage-Max :
20V
VCEsat-Max :
2.45 V
Published :
2000
Mounting Type :
Chassis Mount
Polarity/Channel Type :
N-Channel
Turn On Time :
39 ns
Collector Emitter Voltage (VCEO) :
600V
IGBT Type :
NPT
Max Collector Current :
40A
Mount :
Screw
Number of Elements :
6
Pin Count :
17
Transistor Element Material :
SILICON
Input :
Standard
Vce(on) (Max) @ Vge, Ic :
2.45V @ 15V, 30A
Package / Case :
Module
Collector Emitter Saturation Voltage :
1.95V
Current - Collector (Ic) (Max) :
40A
Power Dissipation :
135W
Turn Off Time-Nom (toff) :
103 ns
Input Capacitance (Cies) @ Vce :
1.3nF @ 25V
Operating Temperature :
150°C TJ
Datasheets
BSM30GD60DLCE3224
Introducing Transistors - IGBTs - Modules Infineon Technologies BSM30GD60DLCE3224 from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:17, Number of Pins:17, Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:150°C TJ, BSM30GD60DLCE3224 pinout, BSM30GD60DLCE3224 datasheet PDF, BSM30GD60DLCE3224 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies BSM30GD60DLCE3224 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



BSM30GD60DLCE3224 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

BSM30GD60DLCE3224 Description


The BSM30GD60DLCE3224 is an Infineon Technologies IGBT module.



BSM30GD60DLCE3224 Features


  • Collector-emitter voltage VCES 600 V

  • DC-collector current TC = 25 °C IC 40 A

  • Collector current tP = 1 ms, TC = 70°C ICRM 60 A

  • Total power dissipation TC=25°C, Transistor Ptot 135 W

  • gate-emitter peak voltage VGES +/- 20V V

  • DC forward current IF 3



BSM30GD60DLCE3224 Applications


  • Industrial


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