BSM50GD120DN2G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Polarity/Channel Type :

N-Channel

Published :

2012

Operating Temperature :

150°C TJ

Terminal Form :

THROUGH-HOLE

Number of Terminations :

39

Input Capacitance (Cies) @ Vce :

33nF @ 25V

Max Collector Current :

72A

Transistor Element Material :

SILICON

Number of Elements :

6

Current - Collector (Ic) (Max) :

78A

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

NTC Thermistor :

No

Mounting Type :

Chassis Mount

Pin Count :

39

Terminal Position :

UPPER

Transistor Application :

POWER CONTROL

Package / Case :

Module

Input :

Standard

VCEsat-Max :

3.7 V

Number of Pins :

21

Collector Emitter Voltage (VCEO) :

1.2kV

Collector Emitter Breakdown Voltage :

1.2kV

JESD-30 Code :

R-XUFM-T39

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

450 ns

Mount :

Screw

Configuration :

Full Bridge

Collector Emitter Saturation Voltage :

2.5V

Case Connection :

Isolated

Power Dissipation :

400W

RoHS Status :

RoHS Compliant

Turn On Time :

100 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

1200V

ECCN Code :

EAR99