BSN304,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

15 pF

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

300V

Drive Voltage (Max Rds On,Min Rds On) :

2.4V 10V

Number of Terminations :

3

JESD-30 Code :

O-PBCY-T3

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

300V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 250mA, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

JESD-609 Code :

e3

Published :

2001

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

8Ohm

Vgs (Max) :

±20V

Packaging :

Tape and Box (TB)

FET Type :

N-Channel

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1W Ta

Drain Current-Max (Abs) (ID) :

0.25A