BSP110,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Height :

1.7mm

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

10 Ω @ 150mA, 5V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Length :

6.7mm

Drive Voltage (Max Rds On,Min Rds On) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

Continuous Drain Current (ID) :

520mA

Current - Continuous Drain (Id) @ 25°C :

520mA Tc

Number of Elements :

1

Surface Mount :

yes

Resistance :

10Ohm

Max Dual Supply Voltage :

100V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Terminal Position :

Dual

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Type :

N-Channel

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Weight :

4.535924g

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Published :

1997

Pin Count :

4

Drain to Source Breakdown Voltage :

100V

RoHS Status :

RoHS Compliant

Threshold Voltage :

2V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-G4

Power Dissipation-Max :

6.25W Tc

Power Dissipation :

6.25W

Vgs(th) (Max) @ Id :

2V @ 1mA

Width :

3.7mm

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

6 pF