BSP315PH6327XTSA1

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Mfr.Part #
BSP315PH6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET P-CH 60V 1.17A SOT223-4
Stock
103,509
In Stock :
103,509

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Threshold Voltage :
-1.5V
Published :
1999
Nominal Vgs :
-1.5 V
Factory Lead Time :
10 Weeks
Fall Time (Typ) :
19 ns
Length :
6.5mm
Input Capacitance (Ciss) (Max) @ Vds :
160pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1
Number of Pins :
4
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
800m Ω @ 1.17A, 10V
Halogen Free :
Halogen Free
Continuous Drain Current (ID) :
1.17A
Terminal Form :
Gull wing
Termination :
SMD/SMT
Max Dual Supply Voltage :
-60V
Mount :
Surface Mount
Turn On Delay Time :
24 ns
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
40
Vgs(th) (Max) @ Id :
2V @ 160μA
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
4
Case Connection :
DRAIN
Manufacturer Package Identifier :
PG-SOT223-4
Drain-source On Resistance-Max :
0.8Ohm
Packaging :
Cut Tape (CT)
Pin Count :
4
Turn-Off Delay Time :
32 ns
Rise Time :
9ns
Series :
SIPMOS®
Additional Feature :
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Element Configuration :
Single
Terminal Position :
Dual
Current - Continuous Drain (Id) @ 25°C :
1.17A Ta
Max Junction Temperature (Tj) :
150°C
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
1.8W
Drain to Source Voltage (Vdss) :
60V
Lead Free :
Lead Free
Transistor Element Material :
SILICON
FET Type :
P-Channel
Contact Plating :
Tin
Width :
6.7mm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pbfree Code :
yes
JESD-609 Code :
e3
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
7.8nC @ 10V
Height :
1.8mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1.8W Ta
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
-60V
Package / Case :
TO-261-4, TO-261AA
Recovery Time :
46 ns
Dual Supply Voltage :
-60V
Datasheets
BSP315PH6327XTSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSP315PH6327XTSA1 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Pins:4, Number of Terminations:4, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, BSP315PH6327XTSA1 pinout, BSP315PH6327XTSA1 datasheet PDF, BSP315PH6327XTSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSP315PH6327XTSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP315PH6327XTSA1


P-Channel Cut Tape (CT) 800m Ω @ 1.17A, 10V ±20V 160pF @ 25V 7.8nC @ 10V 60V TO-261-4, TO-261AA

BSP315PH6327XTSA1 Description

 

  BSP315PH6327XTSA1 are s mall signal transistors  which  are transistors used to amplify low-level signals, but they can also be used as switches. The typical IC values of small signal transistors are between 10 and 500, and the maximum HFE rating is between 80 and 600 mA. They come in two forms: NPN and PNP.

 

 

BSP315PH6327XTSA1 Features


·P-Channel   Enhancement mode Avalanche rated

·Logic Level

·dv/dtrated

·Pb-free lead plating;RoHS compliant

·Qualified according to AEC Q101

·Halogen-free according to IEC61249-2-21

 

BSP315PH6327XTSA1 Applications

 

Small-Signal-Transistor

 

 


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