BSP316PL6327
- Mfr.Part #
- BSP316PL6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- P-CHANNEL MOSFET
- Stock
- 33,682
- In Stock :
- 33,682
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.8Ohm @ 680mA, 10V
- Technology :
- MOSFET (Metal Oxide)
- Drain Current-Max (Abs) (ID) :
- 0.68 A
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20 V
- Current - Continuous Drain (Id) @ 25°C :
- 680mA (Ta)
- Drain to Source Breakdown Voltage :
- -100 V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Turn-Off Delay Time :
- 67.4 ns
- Number of Channels :
- 1
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- HTS Code :
- 8541.29.00.95
- Series :
- SIPMOS®
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 1.8 W
- Number of Terminals :
- 4
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current :
- 68 A
- Power Dissipation-Max (Abs) :
- 1.8 W
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Vgs :
- -1.5 V
- Drain-source On Resistance-Max :
- 1.8 Ω
- Manufacturer :
- Infineon Technologies AG
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Min Operating Temperature :
- -55 °C
- Drain to Source Voltage (Vdss) :
- -100 V
- Vgs(th) (Max) @ Id :
- 2V @ 170µA
- Package / Case :
- TO-261-4, TO-261AA
- Vgs (Max) :
- ±20V
- Terminal Finish :
- MATTE TIN
- Drain to Source Resistance :
- 1.4 Ω
- Rds On Max :
- 1.8 Ω
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 100 V
- FET Feature :
- -
- Terminal Form :
- Gull wing
- Voltage Rating (DC) :
- -100 V
- Max Operating Temperature :
- 150 °C
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4 nC @ 10 V
- Case Connection :
- DRAIN
- Product Status :
- Active
- Turn-On Delay Time :
- 4.7 ns
- Manufacturer Package Identifier :
- PG-SOT223-4
- Height :
- 1.8 mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1.8 W
- Subcategory :
- Other Transistors
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- JESD-30 Code :
- R-PDSO-G4
- Number of Pins :
- 4
- Surface Mount :
- yes
- Pulsed Drain Current-Max (IDM) :
- 2.72 A
- Package :
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds :
- 146 pF @ 25 V
- RoHS :
- Compliant
- JESD-609 Code :
- e3
- Current Rating :
- -680 mA
- Voltage :
- 100 V
- Supplier Device Package :
- PG-SOT223-4-21
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150 °C
- Rise Time :
- 7.5 ns
- Power Dissipation (Max) :
- 1.8W (Ta)
- Continuous Drain Current (ID) :
- -680 mA
- Polarity/Channel Type :
- P-Channel
- Input Capacitance :
- 146 pF
- Datasheets
- BSP316PL6327

MOSFET (Metal Oxide) P-Channel 1.8Ohm @ 680mA, 10V ±20V 146 pF @ 25 V 6.4 nC @ 10 V -100 V TO-261-4, TO-261AA
BSP316PL6327 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 146 pF @ 25 V.This device has a continuous drain current (ID) of [-680 mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100 V, the drain-source breakdown voltage is -100 V.A device's drain current is its maximum continuous current, and this device's drain current is 0.68 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 67.4 ns.A maximum pulsed drain current of 2.72 A is the maximum peak drain current rated for this device.MOSFETs have 1.4 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of -100 V is needed from the drain to the source (Vdss).
BSP316PL6327 Features
a continuous drain current (ID) of -680 mA
a drain-to-source breakdown voltage of -100 V voltage
the turn-off delay time is 67.4 ns
based on its rated peak drain current 2.72 A.
single MOSFETs transistor is 1.4 Ω
a -100 V drain to source voltage (Vdss)
BSP316PL6327 Applications
There are a lot of Infineon
BSP316PL6327 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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