BSP317PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4Ohm @ 430mA, 10V

Base Product Number :

BSP317

REACH SVHC :

No SVHC

Min Operating Temperature :

-55 °C

Drain to Source Breakdown Voltage :

250 V

Turn-On Delay Time :

5.7 ns

Voltage Rating (DC) :

-250 V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-261-4, TO-261AA

Drain-source On Resistance-Max :

4 Ω

Drain to Source Resistance :

4 Ω

Mounting Type :

Surface Mount

Power Dissipation :

1.8 W

Package Shape :

RECTANGULAR

Number of Pins :

4

Supplier Device Package :

PG-SOT223-4-21

Vgs(th) (Max) @ Id :

2V @ 370µA

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Subcategory :

Other Transistors

DS Breakdown Voltage-Min :

250 V

Nominal Vgs :

-1.5 V

Qualification Status :

Not Qualified

Pbfree Code :

yes

Packaging :

Cut Tape

JESD-30 Code :

R-PDSO-G4

Pulsed Drain Current-Max (IDM) :

1.72 A

Technology :

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

262 pF @ 25 V

Series :

SIPMOS®

Max Power Dissipation :

1.8 W

Power Dissipation (Max) :

1.8W (Ta)

Current Rating :

-430 mA

FET Feature :

-

Reach Compliance Code :

Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Dual

Dual Supply Voltage :

-60 V

Drain Current-Max (Abs) (ID) :

0.43 A

Max Operating Temperature :

150 °C

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20 V

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

15.1 nC @ 10 V

Power Dissipation-Max (Abs) :

1.8 W

Turn-Off Delay Time :

254 ns

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

430mA (Ta)

Input Capacitance :

262 pF

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

11.1 ns

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

250 V

Product Status :

Active

Termination :

SMD/SMT

Threshold Voltage :

-1.5 V

Package :

Bulk

Width :

6.7 mm

Number of Terminals :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

Infineon Technologies AG

RoHS :

Compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

Surface Mount :

yes

Case Connection :

DRAIN

Continuous Drain Current (ID) :

430 mA

Rds On Max :

4 Ω

Factory Lead Time :

1 Week

HTS Code :

8541.29.00.75

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free