BSP321PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

100 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain-source On Resistance-Max :

0.9 Ω

Package / Case :

TO-261-4, TO-261AA

Gate to Source Voltage (Vgs) :

20 V

Max Power Dissipation :

1.8 W

Pbfree Code :

yes

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

3.9 A

Manufacturer :

Infineon Technologies AG

Drain to Source Breakdown Voltage :

100 V

Factory Lead Time :

1 Week

Power Dissipation-Max (Abs) :

1.8 W

Rise Time :

4.4 ns

Max Operating Temperature :

150 °C

FET Type :

P-Channel

Power Dissipation :

1.8 W

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Technology :

MOSFET (Metal Oxide)

Package :

Bulk

Avalanche Energy Rating (Eas) :

57 mJ

Supplier Device Package :

PG-SOT223-4-21

Mount :

Surface Mount

FET Feature :

-

Subcategory :

Other Transistors

Series :

SIPMOS®

Drain to Source Voltage (Vdss) :

100 V

Input Capacitance (Ciss) (Max) @ Vds :

319 pF @ 25 V

Element Configuration :

Single

Polarity/Channel Type :

P-Channel

Number of Elements :

1

Nominal Vgs :

-3 V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

900 mΩ

Pin Count :

4

Continuous Drain Current (ID) :

980 mA

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

900mOhm @ 980mA, 10V

Power Dissipation (Max) :

1.8W (Ta)

Turn-On Delay Time :

5.9 ns

Turn-Off Delay Time :

16.5 ns

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Additional Feature :

AVALANCHE RATED

Rds On Max :

900 mΩ

Min Operating Temperature :

-55 °C

Number of Terminals :

4

RoHS :

Compliant

Input Capacitance :

319 pF

Current - Continuous Drain (Id) @ 25°C :

980mA (Tc)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

0.98 A

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 380µA

Surface Mount :

yes

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package Shape :

RECTANGULAR