BSP322PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Turn On Delay Time :

4.6 ns

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Fall Time (Typ) :

8.3 ns

Power Dissipation-Max :

1.8W Ta

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

372pF @ 25V

Halogen Free :

Halogen Free

Rise Time :

4.3ns

Number of Terminations :

4

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.8Ohm

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Length :

6.5mm

Power Dissipation :

1.8W

Number of Elements :

1

Series :

SIPMOS®

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

1A

Terminal Position :

Dual

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 380µA

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

800m Ω @ 1A, 10V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Turn-Off Delay Time :

21.2 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.5mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Package / Case :

TO-261-4, TO-261AA

Height :

1.6mm

Pbfree Code :

yes

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

1A

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

-100V