BSP33,115
- Mfr.Part #
- BSP33,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 2,471
- In Stock :
- 2,471
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Current - Collector (Ic) (Max) :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- VCEsat-Max :
- 0.5 V
- Power Dissipation :
- 1.3W
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- BSP33
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Turn On Time-Max (ton) :
- 500ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector-Base Capacitance-Max :
- 20pF
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Configuration :
- Single
- Published :
- 2009
- Turn Off Time-Max (toff) :
- 650ns
- Case Connection :
- COLLECTOR
- Datasheets
- BSP33,115

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP33,115 Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
BSP33,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BSP33,115 Applications
There are a lot of Nexperia USA Inc.
BSP33,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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