BSP43,115
- Mfr.Part #
- BSP43,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 28,579
- In Stock :
- 28,579
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Published :
- 2009
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Length :
- 6.35mm
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 90V
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 1.3W
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.3W
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Height :
- 6.35mm
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Base Part Number :
- BSP43
- Contact Plating :
- Tin
- Datasheets
- BSP43,115

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP43,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BSP43,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSP43,115 Applications
There are a lot of Nexperia USA Inc.
BSP43,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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