BSR12,215
- Mfr.Part #
- BSR12,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.1A SOT23
- Stock
- 45,942
- In Stock :
- 45,942
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Pin Count :
- 3
- JESD-30 Code :
- R-PDSO-G3
- Frequency - Transition :
- 1.5GHz
- Highest Frequency Band :
- S B
- Published :
- 1999
- JEDEC-95 Code :
- TO-236AB
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Power - Max :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 50nA
- Surface Mount :
- yes
- Power Dissipation-Max (Abs) :
- 0.25W
- Current - Collector (Ic) (Max) :
- 100mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 1V
- HTS Code :
- 8541.21.00.75
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Collector-Base Capacitance-Max :
- 4.5pF
- Base Part Number :
- BSR12
- Transition Frequency :
- 1500MHz
- Datasheets
- BSR12,215

PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSR12,215 Overview
In this device, the DC current gain is 30 @ 50mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 1500MHz.There is a 15V maximal voltage in the device due to collector-emitter breakdown.
BSR12,215 Features
the DC current gain for this device is 30 @ 50mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
a transition frequency of 1500MHz
BSR12,215 Applications
There are a lot of NXP USA Inc.
BSR12,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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