BSR802NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

500mW Ta

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Max Dual Supply Voltage :

20V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

23m Ω @ 3.7A, 2.5V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

2.9A

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

3.7A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

8V

Rise Time :

18ns

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Published :

2011

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

750mV @ 30μA

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.5V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±8V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1447pF @ 10V

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Number of Terminations :

3

Terminal Form :

Gull wing