BSS670S2LH6433XTMA1

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Mfr.Part #
BSS670S2LH6433XTMA1
Manufacturer
Infineon Technologies
Package / Case
SOT-23
Datasheet
Download
Description
MOSFET N-CH 55V 540MA SOT23
Stock
5,813,798
In Stock :
5,813,798

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
10 Weeks
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
0.54A
Min Operating Temperature :
-55°C
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
20V
Rise Time :
25ns
Feedback Cap-Max (Crss) :
10 pF
Drain-source On Resistance-Max :
0.825Ohm
Vgs (Max) :
±20V
Package / Case :
SOT-23
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
540mA
Terminal Position :
Dual
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
55V
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Operating Temperature :
150°C
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Mode :
ENHANCEMENT MODE
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSS670S2LH6433XTMA1 from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:SOT-23, Number of Terminations:3, BSS670S2LH6433XTMA1 pinout, BSS670S2LH6433XTMA1 datasheet PDF, BSS670S2LH6433XTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSS670S2LH6433XTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSS670S2LH6433XTMA1


Tape & Reel (TR) ±20V SOT-23

BSS670S2LH6433XTMA1 Overview


This device conducts a continuous drain current (ID) of 540mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.54A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 55V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

BSS670S2LH6433XTMA1 Features


a continuous drain current (ID) of 540mA


BSS670S2LH6433XTMA1 Applications


There are a lot of Infineon Technologies
BSS670S2LH6433XTMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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