BSS816NWH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.4A, 2.5V

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Vgs(th) (Max) @ Id :

0.75V @ 3.7μA

Drain-source On Resistance-Max :

160Ohm

FET Type :

N-Channel

Terminal Form :

Gull wing

Power Dissipation-Max :

500mW Ta

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

Vgs (Max) :

±8V

ECCN Code :

EAR99

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.5V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Pin Count :

3

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

1.4A

Feedback Cap-Max (Crss) :

10 pF

Number of Terminations :

3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

DS Breakdown Voltage-Min :

20V

Pbfree Code :

yes

JESD-609 Code :

e3

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

20V

JESD-30 Code :

R-PDSO-G3