BSS8402DWQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

13.5 Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

60V 50V

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PDSO-G6

Feedback Cap-Max (Crss) :

5 pF

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

130mA

Number of Elements :

2

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

115mA 130mA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.115A

Drain-source On Resistance-Max :

7.5Ohm

Pbfree Code :

yes

JESD-609 Code :

e3

Reference Standard :

AEC-Q101

Max Power Dissipation :

200mW

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)