BST82,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max :

830mW Tc

Rds On (Max) @ Id, Vgs :

10 Ω @ 150mA, 5V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.175A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

3

Element Configuration :

Single

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Number of Elements :

1

Surface Mount :

yes

Series :

TrenchMOS™

Max Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

Dual

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

830mW

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Continuous Drain Current (ID) :

190mA

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Published :

1997

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Feedback Cap-Max (Crss) :

6 pF

Factory Lead Time :

6 Weeks

HTS Code :

8541.21.00.95