CSD17581Q3A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 16A, 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Width :

3.3mm

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

DS Breakdown Voltage-Min :

30V

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.0047Ohm

Lead Free :

Lead Free

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

154A

Drain Current-Max (Abs) (ID) :

21A

Feedback Cap-Max (Crss) :

195 pF

Power Dissipation-Max :

2.8W Ta 63W Tc

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Number of Terminations :

5

Package / Case :

8-PowerVDFN

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

76 mJ

Thickness :

800μm

Length :

3.3mm

Terminal Form :

Flat

Base Part Number :

CSD17581

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Case Connection :

DRAIN

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.7V @ 250μA

JESD-609 Code :

e3

Terminal Position :

Dual

Series :

NexFET™

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE