CSD18531Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7.8ns

Base Part Number :

CSD18531

Width :

6mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Power Dissipation-Max :

3.1W Ta 156W Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON

Threshold Voltage :

1.8V

Turn On Delay Time :

4.4 ns

Contact Plating :

Tin

Terminal Position :

Dual

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 30V

JESD-609 Code :

e3

Nominal Vgs :

1.8 V

Length :

4.9mm

Fall Time (Typ) :

2.7 ns

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Series :

NexFET™

Thickness :

1mm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.1mm

Packaging :

Cut Tape (CT)

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 22A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Number of Pins :

8

Power Dissipation :

156W

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Radiation Hardening :

No

Number of Terminations :

5

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Vgs (Max) :

±20V

Element Configuration :

Single

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

19A Ta 100A Tc

Turn-Off Delay Time :

20 ns

Avalanche Energy Rating (Eas) :

224 mJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ