CSD18532Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

22 ns

Series :

NexFET™

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

23A

Vgs (Max) :

±20V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Pins :

8

Mount :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Contact Plating :

Tin

Power Dissipation-Max :

3.2W Ta 156W Tc

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Avalanche Energy Rating (Eas) :

320 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

5mm

JESD-609 Code :

e3

Fall Time (Typ) :

3.1 ns

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.0043Ohm

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Rise Time :

7.2ns

Continuous Drain Current (ID) :

100A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

5.8 ns

Width :

6mm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Base Part Number :

CSD18532

Element Configuration :

Single

Terminal Position :

Dual

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Thickness :

950μm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

5070pF @ 30V

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

400A

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

17 pF