CSD18533Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Width :

6mm

Element Configuration :

Single

Threshold Voltage :

1.9V

Radiation Hardening :

No

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

17A Ta 100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

5

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Elements :

1

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

6 Weeks

Lead Free :

Contains Lead

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

3.2W Ta 116W Tc

Base Part Number :

CSD18533

JESD-609 Code :

e3

Thickness :

1mm

Series :

NexFET™

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 18A, 10V

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

Vgs (Max) :

±20V

Fall Time (Typ) :

2 ns

Input Capacitance (Ciss) (Max) @ Vds :

2750pF @ 30V

Feedback Cap-Max (Crss) :

9 pF

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns

Length :

4.9mm

Rise Time :

5.5ns

Nominal Vgs :

1.9 V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Power Dissipation :

3.2W

Continuous Drain Current (ID) :

100A

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

5.2 ns

Mount :

Surface Mount

Pbfree Code :

yes