CSD18563Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Base Part Number :

CSD18563

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 18A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Power Dissipation-Max :

3.2W Ta 116W Tc

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Lead Free :

Contains Lead

Height :

1.1mm

Mounting Type :

Surface Mount

Turn On Delay Time :

3.2 ns

Pulsed Drain Current-Max (IDM) :

96A

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Rise Time :

6.3ns

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Turn-Off Delay Time :

11.4 ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Continuous Drain Current (ID) :

100A

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

Width :

6mm

Length :

4.9mm

Thickness :

1mm

Fall Time (Typ) :

1.7 ns

Number of Terminations :

5

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

JESD-609 Code :

e3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Ta