CSD19501KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

5 ns

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

3

Case Connection :

DRAIN

Weight :

6.000006g

Drain to Source Breakdown Voltage :

80V

Power Dissipation-Max :

217W Tc

Rise Time :

15ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Threshold Voltage :

2.6V

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

39 ns

Width :

8.7mm

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Height :

4.7mm

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

100A Ta

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0079Ohm

Continuous Drain Current (ID) :

100A

Series :

NexFET™

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Lead Free :

Lead Free

Thickness :

4.58mm

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 40V

Vgs (Max) :

±20V

Packaging :

Tube

Base Part Number :

CSD19501

Length :

10.16mm

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

21 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 60A, 10V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ