CSD19503KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2.8V

Series :

NexFET™

Number of Terminations :

3

Lead Free :

Lead Free

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

80V

Thickness :

4.58mm

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

2 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pulsed Drain Current-Max (IDM) :

247A

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

7 ns

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Package / Case :

TO-220-3

FET Type :

N-Channel

Factory Lead Time :

6 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

DS Breakdown Voltage-Min :

80V

Base Part Number :

CSD19503

Contact Plating :

Tin

Width :

8.7mm

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain Current-Max (Abs) (ID) :

94A

Mount :

Through Hole

Continuous Drain Current (ID) :

100A

Height :

4.7mm

Power Dissipation :

188W

Weight :

6.000006g

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 60A, 10V

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Turn-Off Delay Time :

11 ns

Number of Channels :

1

ECCN Code :

EAR99

Length :

10.16mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 40V

Packaging :

Tube

JESD-609 Code :

e3

Case Connection :

DRAIN

Element Configuration :

Single

Rise Time :

3ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

188W Tc

Pbfree Code :

yes