CSD19536KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Thickness :

4.58mm

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

REACH SVHC :

No SVHC

Rise Time :

8ns

Continuous Drain Current (ID) :

150A

Series :

NexFET™

Pulsed Drain Current-Max (IDM) :

400A

Turn On Delay Time :

14 ns

Weight :

6.000006g

Mount :

Through Hole

Lead Free :

Lead Free

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Pbfree Code :

yes

Case Connection :

DRAIN

Turn-Off Delay Time :

38 ns

Element Configuration :

Single

Threshold Voltage :

2.5V

Transistor Application :

SWITCHING

Packaging :

Tube

Factory Lead Time :

8 Weeks

Width :

8.7mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Fall Time (Typ) :

5 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

375W Tc

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

150A Ta

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Contact Plating :

Tin

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

3

Base Part Number :

CSD19536

Avalanche Energy Rating (Eas) :

806 mJ

FET Type :

N-Channel

Height :

4.7mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.16mm

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

100V