CSD22204W

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Pbfree Code :

yes

Terminal Form :

Ball

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 4V

Length :

1.75mm

Fall Time (Typ) :

2.29 μs

Height :

625μm

Drain Current-Max (Abs) (ID) :

5A

Pulsed Drain Current-Max (IDM) :

80A

Number of Pins :

9

Rise Time :

600ns

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 2A, 4.5V

Vgs (Max) :

-6V

Feedback Cap-Max (Crss) :

265 pF

Drain-source On Resistance-Max :

0.014Ohm

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.7W Ta

Number of Terminations :

9

Turn On Delay Time :

58 ns

Drain to Source Voltage (Vdss) :

8V

Width :

1.75mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

8V

Turn-Off Delay Time :

3.45 μs

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD22204

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

950mV @ 250μA

JESD-609 Code :

e1

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

9-UFBGA, DSBGA

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Contact Plating :

Copper, Silver, Tin

Gate to Source Voltage (Vgs) :

6V

Gate Charge (Qg) (Max) @ Vgs :

24.6nC @ 4.5V

Continuous Drain Current (ID) :

5A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)