CSD25201W15

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Ball

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Operating Mode :

ENHANCEMENT MODE

Package / Case :

9-UFBGA, DSBGA

Qualification Status :

Not Qualified

Turn On Delay Time :

9.5 ns

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Number of Elements :

1

Base Part Number :

CSD25201

Terminal Position :

BOTTOM

Lead Free :

Contains Lead

Series :

NexFET™

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

9

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

51 ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

9

Rds On (Max) @ Id, Vgs :

40m Ω @ 2A, 4.5V

Rise Time :

11ns

Pin Count :

9

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 10V

Gate to Source Voltage (Vgs) :

-6V

Fall Time (Typ) :

38 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-700mV

Drain-source On Resistance-Max :

0.07Ohm

Nominal Vgs :

-700 mV

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Continuous Drain Current (ID) :

4A

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.5W Ta